The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Sep. 17, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Bo-Chang Su, Tainan, TW;
Chih-Ho Tai, Tainan, TW;
Wei-Chih Weng, Tainan, TW;
Hsun-Ying Huang, Tainan, TW;
Hsien-Liang Meng, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract
Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The backside illuminated image sensor device structure includes a substrate having a frontside and a backside and a pixel array formed in the frontside of the substrate. The backside illuminated image sensor device structure further includes an antireflective layer formed over the backside of the substrate, and the antireflective layer is made of silicon carbide nitride.