Tainan, Taiwan

Hsun-Ying Huang

This inventor holds 81 USPTO granted patents and 17 published patent applications, primarily in Semiconductor Devices (CPC class H01L27-1463). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsun-Ying Huang. Retrieved from https://idiyas.com/inventor/hsun-ying-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 81 

% Patents Active = 93.8

Average Co-Inventor Count = 5.2

ph-index = 6

Forward Citations = 385(Granted Patents)

Forward Citations (Not Self Cited) = 299(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Tainan, TW (2013 - 2024)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:


Years Active: 2013-2026

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Areas of Expertise:
Wide Channel Semiconductor Device
Stacked Substrate Structure
Image Sensor Device
Quantum Efficiency
CMOS Image Sensor
Through-Substrate-Via
Light Shielding Layer
Single Photon Avalanche Diode
Wafer Planarization
Thermal Management
Inter-Tier Interconnection
81 patents (USPTO):Explore Patents

Title: Hsun-Ying Huang: A Pioneer in Image Sensor Technology

Introduction: Hsun-Ying Huang is a prominent inventor based in Tainan, Taiwan, recognized for his significant contributions to the field of image sensor technology. With an impressive portfolio of 76 patents, Huang has made a lasting impact on the industry through innovative designs and methodologies.

Latest Patents: Among his latest inventions, Huang has developed an advanced image sensor device. This device features a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is integrated within the semiconductor substrate, and the interface between the two consists of a direct band gap material. Additionally, the shallow trench isolation surrounds the radiation sensing member, ensuring enhanced functionality. Another notable invention is a CMOS image sensor that incorporates an indented photodiode structure. This innovation includes a substrate and a transfer gate positioned on the front-side surface, with a photo detecting column containing a doped sensing layer that features recessed portions. This design enhances the junction interface and significantly improves the full well capacity of the photodiode.

Career Highlights: Hsun-Ying Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, one of the leading semiconductor manufacturers globally. His work at this esteemed company has allowed him to refine his expertise in image sensing technologies, pushing the boundaries of what is possible in the field.

Collaborations: Huang has collaborated with notable professionals in the industry, including Kuo-Cheng Lee and Hsin-Chi Chen. Together, they have contributed to the advancement of innovative technologies that have reshaped the landscape of image sensors.

Conclusion: Hsun-Ying Huang stands as a testament to the power of innovation within the field of image sensing technology. With a robust patent portfolio and a commitment to advancing semiconductor technology, Huang continues to inspire future generations of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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