The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Jul. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Cheng-Yuan Li, Kaohsiung, TW;

Yen-Liang Lin, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 27/14607 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 27/1469 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06136 (2013.01); H01L 2224/06177 (2013.01); H01L 2224/06517 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/09517 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80075 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/83075 (2013.01); H01L 2224/83948 (2013.01); H01L 2224/9211 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.


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