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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855118 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Dec. 15, 2022

Image sensor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Yen-Liang Lin, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/0352 (2006.01); H01L 31/0336 (2006.01); H01L 31/028 (2006.01); H01L 31/0312 (2006.01); H01L 31/0304 (2006.01); H01L 31/0296 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14698 (2013.01); H01L 31/035272 (2013.01); H01L 31/103 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14689 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/0336 (2013.01);
Abstract

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

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