The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Oct. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yun-Wei Cheng, Taipei, TW;

Chun-Hao Chou, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8057 (2025.01); H10F 39/014 (2025.01); H10F 39/024 (2025.01); H10F 39/026 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01); H10F 39/182 (2025.01); H10F 39/805 (2025.01); H10F 39/8067 (2025.01);
Abstract

An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, the first isolation structure has an etch stop layer, the etch stop layer has an end portion, and the end portion has an H-like shape. The image sensor device includes a second isolation structure extending into the substrate from the back surface to the end portion. The second isolation structure surrounds a second portion of the light-sensing region.


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