The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jul. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Min-Feng Kao, Chiayi, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Hsun-Ying Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/6835 (2013.01); H01L 21/76804 (2013.01); H01L 21/76832 (2013.01); H01L 21/76883 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/5283 (2013.01); H01L 24/00 (2013.01); H01L 24/02 (2013.01); H01L 23/3114 (2013.01); H01L 23/3192 (2013.01); H01L 23/525 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/6834 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13183 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/01013 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first plurality of interconnects within a first inter-level dielectric (ILD) structure disposed along a first side of a first substrate. A conductive pad is arranged along a second side of the first substrate. A first through-substrate-via (TSV) physically contacts an interconnect of the first plurality of interconnects and a first surface of the conductive pad. A second plurality of interconnects are within a second ILD structure disposed on a second substrate. A second TSV extends from an interconnect of the second plurality of interconnects to through the second substrate. A conductive bump is arranged on a second surface of the conductive pad opposing the first surface. The second TSV has a greater width than the first TSV.


Find Patent Forward Citations

Kao, Min-Feng. (2024). Integrated chip for standard logic performance improvement having a back-side through-substrate-via and method for forming the integrated chip (U.S. Patent No. 12142569). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12142569

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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