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For the Inventor, By the Inventor

Chiayi, Taiwan

Min-Feng Kao

This inventor holds 138 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Technology (CPC class H01L23-481). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Min-Feng Kao. Retrieved from https://idiyas.com/inventor/min-feng-kao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 138 

% Patents Active = 90.6

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 438(Granted Patents)

Forward Citations (Not Self Cited) = 363(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:

goldMedal138 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2026

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Areas of Expertise:
Image Sensor
Metal-Insulator-Metal Device
CMOS Image Sensors
Hybrid Bonding Technology
Thermal Management
Through-Substrate-Via
Backside Contact
Stacked Integrated Circuits
Semiconductor Structure
Oversized Via
Shield Structure
Gate Electrodes
138 patents (USPTO):Explore Patents
1. 12525528 - Metal-insulator-metal device with improved performance (2026-01-13),
2. 12520598 - Protection diode structure for stacked image sensor devices (2026-01-06),
3. 12490538 - Stacked structure for CMOS image sensors (2025-12-02),
4. 12322694 - Metal-insulator-metal device with improved performance (2025-06-03),
5. 12315843 - Hybrid bonding technology for stacking integrated circuits (2025-05-27),
6. 12300669 - Backside contact for thermal displacement in a multi-wafer stacked integrated circuit (2025-05-13),
7. 12283564 - Semiconductor structure and manufacturing method thereof (2025-04-21),
8. 12278250 - Semiconductor device including image sensor and method of forming the same (2025-04-14),
9. 12230554 - Shield structure for backside through substrate vias (TSVs) (2025-02-18),
10. 12218166 - CSI with controllable isolation structure and methods of manufacturing and using the same (2025-02-04),
11. 12218165 - Semiconductor image sensor and method of manufacturing the same (2025-02-04),
12. 12218106 - Backside contact to improve thermal dissipation away from semiconductor devices (2025-02-04),
13. 12205868 - Oversized via as through-substrate-via (TSV) stop layer (2025-01-21),
14. 12183761 - Semiconductor structure, back-side illuminated image sensor and method for manufacturing the same (2024-12-31),
15. 12176370 - Stacked structure for CMOS image sensors including through-substrate-via contacting negative bias circuit (2024-12-24),

Title: The Innovative Journey of Min-Feng Kao

Introduction: Min-Feng Kao, a talented inventor hailing from Chiayi, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Min-Feng Kao holds several patents in the areas of nanotechnology and renewable energy, showcasing his commitment to creating sustainable solutions for the future.

Career Highlights: With a background in engineering and a passion for innovation, Min-Feng Kao has led a successful career marked by his ability to transform creative ideas into tangible products that have a positive impact on society.

Collaborations: Throughout his career, Min-Feng Kao has collaborated with leading research institutions and technology companies to further develop his inventions and bring them to market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Min-Feng Kao's dedication to pushing the boundaries of technology and his relentless pursuit of innovation make him a true pioneer in his field, inspiring the next generation of inventors to dream big and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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