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For the Inventor, By the Inventor

Tainan, Taiwan

Jeng-Shyan Lin

USPTO Granted Patents = 111 

Average Co-Inventor Count = 5.5

ph-index = 9

Forward Citations = 399(Granted Patents)


Inventors with similar research interests:


Location History:

  • Hsin-Chu, TW (2007)
  • Tainan, TW (2006 - 2024)

Company Filing History:

goldMedal111 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2006-2025

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111 patents (USPTO):
1. 12482791 - Stacked integrated circuits with redistribution lines (2025-11-25),
2. 12424577 - Isolation structure for bond pad structure (2025-09-23),
3. 12400984 - Isolation structure for bond pad structure (2025-08-26),
4. 12382744 - Stacked substrate structure with inter-tier interconnection (2025-08-05),
5. 11996433 - Pad structure for front side illuminated image sensor (2024-05-28),
6. 11973101 - Mechanisms for forming image-sensor device with deep-trench isolation structure (2024-04-30),
7. 11923338 - Stacked integrated circuits with redistribution lines (2024-03-05),
8. 11915977 - Interconnect structure for stacked device (2024-02-27),
9. 11817470 - Stacked substrate structure with inter-tier interconnection (2023-11-14),
10. 11769781 - Backside illuminated global shutter image sensor (2023-09-26),
11. 11694979 - Isolation structure for bond pad structure (2023-07-04),
12. 11596800 - Interconnect structure and method of forming same (2023-03-07),
13. 11342374 - Mechanisms for forming image-sensor device with deep-trench isolation structure (2022-05-24),
14. 11322540 - Pad structure for front side illuminated image sensor (2022-05-03),
15. 11244925 - Semiconductor device structure with back-side layer to reduce leakage (2022-02-08),

Title: The Innovative Contributions of Jeng-Shyan Lin

Introduction: Jeng-Shyan Lin, based in Tainan, Taiwan, is an influential inventor in the semiconductor field, holding an impressive total of 107 patents. His work primarily focuses on advancements within semiconductor structures, which play a critical role in the development of image sensors.

Latest Patents: Among his latest innovations, Lin has developed a patent for a "Pad structure for front-side illuminated image sensor." This semiconductor structure boasts a unique design that includes a dielectric layer with a recess, facilitating enhanced functionality of image sensors. Additionally, he has created mechanisms for forming an image-sensor device with a deep-trench isolation structure. This innovative device incorporates a semiconductor substrate equipped with a radiation-sensing region, demonstrating Lin's commitment to improving the efficiency and effectiveness of imaging technology.

Career Highlights: Lin is associated with the Taiwan Semiconductor Manufacturing Company Ltd., a leading enterprise in the semiconductor industry. His extensive portfolio of patents reflects his dedication to innovation and his ability to address complex challenges in semiconductor design. Throughout his career, Lin has achieved recognition for his contributions, making it easier for companies to develop advanced imaging technologies that are essential in various industries.

Collaborations: Lin has partnered with several notable colleagues, including Dun-Nian Yaung and Jen-Cheng Liu. Their collaborative efforts have contributed to significant technological advancements, further establishing Lin's reputation as a key player in semiconductor innovation.

Conclusion: Jeng-Shyan Lin's remarkable contributions to semiconductor technology and his extensive patent portfolio underscore his pivotal role as an inventor. His innovations continue to pave the way for advancements in image sensors, demonstrating how dedicated inventors can drive industry progress and inspire future developments in technology.

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