The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Jun. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jeng-Shyan Lin, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Hsun-Ying Huang, Tainan, TW;

Wei-Chih Weng, Tainan, TW;

Yu-Yang Shen, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 24/00 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/1463 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first plurality of interconnects within a first dielectric structure on a first substrate, and a second plurality of interconnects within a second dielectric structure on a second substrate. A bonding structure is arranged between the first dielectric structure and the second substrate. An inter-tier interconnect structure extends between the first plurality of interconnects and the second plurality of interconnects and through the second substrate. The inter-tier interconnect structure includes a first region having substantially vertical sidewalls extending through the second substrate and a second region surrounded by the bonding structure. The second region contacts a bottom of the first region and has tapered sidewalls.


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