The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Apr. 21, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Sin-Yao Huang, Tainan, TW;

Jeng-Shyan Lin, Tainan, TW;

Shih-Pei Chou, Tainan, TW;

Tzu-Hsuan Hsu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 24/03 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01);
Abstract

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first isolation structure on a first surface of a substrate. A second isolation structure is formed into the first surface of the substrate. Sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure. A bond pad is formed in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.


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