Metal-insulator-metal device with improved performance

Abstract

Various embodiments of the present disclosure are directed towards a metal-insulator-metal (MIM) device. The MIM device includes a first conductive layer disposed over a substrate, a first capacitor dielectric disposed over the first conductive layer, and a second conductive layer disposed over the first capacitor dielectric. The first conductive layer and the first capacitor dielectric laterally extend past an outermost sidewall of the second conductive layer. A second capacitor dielectric is disposed over the second conductive layer and the first capacitor dielectric, and a third conductive layer is disposed over the second capacitor dielectric. The third conductive layer laterally extends past the outermost sidewall of the second conductive layer. A conductive structure is coupled to both the first conductive layer and the third conductive layer. The conductive structure extends through the first capacitor dielectric and the second capacitor dielectric laterally outside of the second conductive layer.