The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Mar. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

You Che Chuang, Hsinchu, TW;

Chih-Ming Lee, Hsinchu, TW;

Hsin-Chi Chen, Hsinchu, TW;

Hsun-Ying Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 5/06 (2013.01);
Abstract

A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The first butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion, wherein the second portion directly contacts each of a top surface and a sidewall of the first gate structure.


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