The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Oct. 05, 2005
Huan-shun Lin, Taichung, TW;
Chen-hua Tsai, Hsinchu County, TW;
Wei-tsun Shiau, Kaohsiung County, TW;
Hsien-liang Meng, Hsinchu, TW;
Hung-lin Shih, Hsinchu, TW;
Huan-Shun Lin, Taichung, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Wei-Tsun Shiau, Kaohsiung County, TW;
Hsien-Liang Meng, Hsinchu, TW;
Hung-Lin Shih, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gate and a gate dielectric layer disposed between the gate and the substrate. The spacer is disposed on the sidewall of the gate structure. The source/drain region is disposed in the substrate on two sides of the spacer. The barrier layer is disposed around the source/drain region. The source/drain region and the barrier layer are fabricated using an identical material. However, the doping concentration of the source/drain region is larger than the doping concentration of the barrier layer.