Taichung, Taiwan

Huan-Shun Lin

This inventor holds 3 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2006-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huan-Shun Lin. Retrieved from https://idiyas.com/inventor/huan-shun-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 3

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2006-2007

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3 patents (USPTO):Explore Patents

Title: Huan-Shun Lin: Innovator in Semiconductor Technology

Introduction

Huan-Shun Lin is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancing the capabilities of metal oxide semiconductor devices, which are crucial for modern electronic applications.

Latest Patents

Huan-Shun Lin's latest patents include a groundbreaking metal oxide semiconductor transistor device. This device features a substrate, a gate structure, a spacer, a source/drain region, and a barrier layer. The gate structure is positioned on the substrate and includes a gate along with a gate dielectric layer. The spacer is located on the sidewall of the gate structure, while the source/drain region is integrated into the substrate on either side of the spacer. Notably, the barrier layer surrounds the source/drain region, with both components fabricated from the same material, although the doping concentration differs.

Another significant patent involves a semiconductor device that comprises a substrate, a gate structure, a spacer, a SiGe layer, and a SiGe protection layer. The gate structure is deposited on the substrate, and the spacer is applied to the sidewalls of the gate structure. The SiGe layer is positioned in the substrate on both sides of the spacer, extending beneath part of it. The top level of the SiGe layer is higher than the substrate surface, and the SiGe protection layer, which consists of SiGe, is deposited on top.

Career Highlights

Huan-Shun Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

Huan-Shun Lin has collaborated with notable coworkers, including Hsiang-Ying Wang and Hung-Lin Shih. Their combined expertise contributes to the advancement of semiconductor research and development.

Conclusion

Huan-Shun Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and drive innovation forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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