The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Sep. 28, 2005
Huan-shun Lin, Taichung, TW;
Hung-lin Shih, Hsinchu, TW;
Hsiang-ying Wang, Chiai, TW;
Jih-shun Chiang, Changhua County, TW;
Min-chi Fan, Hsinchu, TW;
Huan-Shun Lin, Taichung, TW;
Hung-Lin Shih, Hsinchu, TW;
Hsiang-Ying Wang, Chiai, TW;
Jih-Shun Chiang, Changhua County, TW;
Min-Chi Fan, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SiGelayer and a SiGeprotection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SiGelayer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SiGelayer is higher than the surface of the substrate. Moreover, the SiGeprotection layer is deposited on the SiGelayer and the SiGeprotection layer comprises SiGe, where 0≦y1<y.