United Microelectronics Corp.

Huan-Shun Lin

Hung-Lin Shih

Hsiang-Ying Wang

Neng-Hui Yang

Chen-Hua Tsai

Wei-Tsun Shiau

Hsien-Liang Meng

Jih-Shun Chiang

Min-Chi Fan

A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gate and a gate dielectric layer disposed between the gate and the substrate. The spacer is disposed on the sidewall of the gate structure. The source/drain region is disposed in the substrate on two sides of the spacer. The barrier layer is disposed around the source/drain region. The source/drain region and the barrier layer are fabricated using an identical material. However, the doping concentration of the source/drain region is larger than the doping concentration of the barrier layer.

Metal oxide semiconductor transistor device

A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SiGelayer and a SiGeprotection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SiGelayer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SiGelayer is higher than the surface of the substrate. Moreover, the SiGeprotection layer is deposited on the SiGelayer and the SiGeprotection layer comprises SiGe, where 0&#x2266;y1&#x3c;y.

[object Object]

A method of manufacturing a MOS transistor, comprising the steps of providing a semiconductor substrate, forming a gate structure on the semiconductor substrate, performing an implantation to form two implanted regions in the semiconductor substrate respectively adjacent to the gate structure, performing an etching process to remove each implanted region and form a trench, and performing a selective epitaxial growth to fill epitaxial crystal into the trenches, thereby forming a source/drain of the MOS transistor.

Method of manufacturing a MOS transistor

Growing community of inventors

Taichung, Taiwan

Huan-Shun Lin