The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Mar. 16, 1999
Applicant:
Inventors:
Assignee:
United Silicon Incorporated, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method for manufacturing a shallow trench isolation. A substrate is provided, wherein the substrate has a pad oxide on the substrate and a silicon nitride layer on the pad oxide layer, and a trench penetrates through the silicon oxide layer and the pad oxide layer and into the substrate. A first oxide layer is conformally formed on the silicon nitride layer and in the trench. A rapid thermal process is performed. A second oxide layer is formed on the oxide layer to fill the trench. Portions of the first and the second oxide layers are removed to expose the silicon nitride layer.