The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Sep. 11, 2006
Che-hung Liu, Tainan County, TW;
Po-lun Cheng, Kaohsiung County, TW;
Chun-an Lin, Chiayi County, TW;
Li-yuen Tang, Hsinchu County, TW;
Hung-lin Shih, Hsinchu, TW;
Ming-chi Fan, Hsinchu, TW;
Hsien-liang Meng, Hsinchu, TW;
Jih-shun Chiang, Changhua County, TW;
Che-Hung Liu, Tainan County, TW;
Po-Lun Cheng, Kaohsiung County, TW;
Chun-An Lin, Chiayi County, TW;
Li-Yuen Tang, Hsinchu County, TW;
Hung-Lin Shih, Hsinchu, TW;
Ming-Chi Fan, Hsinchu, TW;
Hsien-Liang Meng, Hsinchu, TW;
Jih-Shun Chiang, Changhua County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.