The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 04, 1998
Shih-Ming Lan, Hsinchu, TW;
United Silicon Incorporated, Hsinchu, TW;
Abstract
A method of forming interconnections is provided. A defined metal layer is formed as a metal line on a provided substrate. An oxide layer is formed on the metal layer and on the substrate. A silicon nitride layer is formed on the oxide layer. The oxide layer and the silicon nitride layer constitute a seed layer. A via hole is formed in the silicon nitride layer to expose the oxide layer positioned over the metal layer. A dielectric layer is formed on the seed layer. Since the silicon nitride layer and the oxide layer are different, a part of the dielectric layer positioned on the silicon nitride layer is a silicon oxide layer having holes therein. The other dielectric layer positioned on the oxide layer within the via hole is a dense silicon oxide layer.