The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Apr. 16, 1999
Applicant:
Inventor:
Kuan-Yang Liao, Taipei, TW;
Assignee:
United Silicon Incorporated, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/128 ; H01L 2/144 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/128 ; H01L 2/144 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method of fabricating a field effect transistor is described. A gate oxide layer is formed on a substrate. A gate is formed on the gate oxide layer. A source region and a drain region are formed beside the gate in the substrate. A first spacer is formed beside a sidewall of the gate. A preserve layer is formed beside the first spacer. A second spacer is formed beside a sidewall of the preserve layer.