The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Sep. 11, 1999
United Microelectronics Corp., Hsinchu, TW;
United Silicon Incorporated, Hsinchu, TW;
Abstract
A dielectric layer in a dual-damascene interconnect is described. A dual-damascene interconnect structure is formed on a substrate. The dual-damascene interconnect structure has a first dielectric layer formed over the substrate, a second dielectric layer formed on the first dielectric layer, a first wire penetrating through the second dielectric layer and a second wire. The second wire penetrates through the second dielectric layer and is electrically coupled to the substrate. The second dielectric layer is removed. A barrier cap layer is formed conformally over the substrate. A third dielectric layer is formed on the barrier cap layer and an air gap is formed in a space enclosed by the third dielectric layer, the first and the second wires. A fourth dielectric layer is formed on the third dielectric layer. A planarizing process is performed to planarize the fourth dielectric layer.