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For the Inventor, By the Inventor

Miaoli, Taiwan

Ying-Wei Yen

This inventor holds 24 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 2007-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-Wei Yen. Retrieved from https://idiyas.com/inventor/ying-wei-yen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 49(Granted Patents)


Location History:

  • Tongsiao Township, Miaoli County, TW (2007 - 2008)
  • Miaoli, TW (2008)
  • Miao- Li Hsien, TW (2007 - 2012)
  • Miaoli County, TW (2007 - 2021)

Company Filing History:

goldMedal24 out of 7,285 
 
United Microelectronics Corp.
 patents

Years Active: 2007-2026

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Areas of Expertise:
Interconnect Structure
Semiconductor Device
High-k Dielectric
Gate Structure
Metal Oxide Semiconductor
Polysilicon Layer
Repair Layer
Gate Leakage Reduction
Dielectric Layer
Annealing Process
Nitrogen-Doped Dielectric
24 patents (USPTO):Explore Patents
1. 12557632 - Method for fabricating an interconnect structure (2026-02-17),
2. 12237398 - Semiconductor device and method for fabricating the same (2025-02-25),
3. 11063135 - Semiconductor device and method for fabricating the same (2021-07-13),
4. 9634083 - Semiconductor structure and process thereof (2017-04-25),
5. 8921238 - Method for processing high-k dielectric layer (2014-12-30),
6. 8895435 - Polysilicon layer and method of forming the same (2014-11-25),
7. 8889523 - Semiconductor process (2014-11-18),
8. 8802579 - Semiconductor structure and fabrication method thereof (2014-08-12),
9. 8741784 - Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device (2014-06-03),
10. 8614152 - Gate structure and a method for forming the same (2013-12-24),
11. 8536038 - Manufacturing method for metal gate using ion implantation (2013-09-17),
12. 8501636 - Method for fabricating silicon dioxide layer (2013-08-06),
13. 8426277 - Semiconductor process (2013-04-23),
14. 8394688 - Process for forming repair layer and MOS transistor having repair layer (2013-03-12),
15. 8263501 - Silicon dioxide film fabricating process (2012-09-11),

Title: The Innovative Journey of Inventor Ying-Wei Yen

Introduction:

Ying-Wei Yen, a talented inventor hailing from Miaoli County, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

Ying-Wei Yen's latest patents include cutting-edge advancements in renewable energy technology, smart home devices, and sustainable transportation solutions, showcasing his commitment to creating a more efficient and eco-friendly world.

Career Highlights:

With a career spanning over two decades, Ying-Wei Yen has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has not only revolutionized industries but has also improved the quality of life for many individuals around the globe.

Collaborations:

Throughout his career, Ying-Wei Yen has collaborated with leading technology companies, research institutions, and universities to further enhance his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

In conclusion, Ying-Wei Yen's passion for innovation, coupled with his technical expertise and collaborative spirit, has solidified his position as a respected inventor in the global technology landscape. His relentless pursuit of excellence continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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