The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Oct. 12, 2011
Chien-liang Lin, Taoyuan County, TW;
Shao-wei Wang, Taichung, TW;
Yu-ren Wang, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Chien-Liang Lin, Taoyuan County, TW;
Shao-Wei Wang, Taichung, TW;
Yu-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.