The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jul. 24, 2012
Shao-wei Wang, Taichung, TW;
Yu-ren Wang, Tainan, TW;
Chien-liang Lin, Taoyuan County, TW;
Ying-wei Yen, Miaoli County, TW;
Kun-yuan Lo, Tainan, TW;
Chih-wei Yang, Kaohsiung, TW;
Shao-Wei Wang, Taichung, TW;
Yu-Ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Ying-Wei Yen, Miaoli County, TW;
Kun-Yuan Lo, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating silicon dioxide layer is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. Next, the semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate. Then, the chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer. Then, the semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer.