The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jan. 31, 2011
Chien-liang Lin, Taoyuan County, TW;
Yun-ren Wang, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Wen-yi Teng, Kaohsiung, TW;
Chan-lon Yang, Taipei, TW;
Chien-Liang Lin, Taoyuan County, TW;
Yun-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Wen-Yi Teng, Kaohsiung, TW;
Chan-Lon Yang, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The method of forming a polysilicon layer is provided. A first polysilicon layer with a first grain size is formed on a substrate. A second polysilicon layer with a second grain size is formed on the first polysilicon layer. The first grain size is smaller than the second grain size. The first polysilicon layer with a smaller grain size can serve as a base for the following deposition, so that the second polysilicon layer formed thereon has a flatter topography, and thus, the surface roughness is reduced and the Rs uniformity within a wafer is improved.