The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Sep. 23, 2011
Chien-liang Lin, Taoyuan County, TW;
Shih-hung Tsai, Tainan, TW;
Chun-hsien Lin, Tainan, TW;
Te-lin Sun, Kaohsiung, TW;
Shao-wei Wang, Taichung, TW;
Ying-wei Yen, Miaoli County, TW;
Yu-ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Shih-Hung Tsai, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
Te-Lin Sun, Kaohsiung, TW;
Shao-Wei Wang, Taichung, TW;
Ying-Wei Yen, Miaoli County, TW;
Yu-Ren Wang, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.