The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jun. 27, 2011
Chien-liang Lin, Taoyuan County, TW;
Ying-wei Yen, Miaoli County, TW;
Yu-ren Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.