The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jun. 21, 2011
Shao-wei Wang, Taichung, TW;
Yu-ren Wang, Tainan, TW;
Chien-liang Lin, Taoyuan County, TW;
Wen-yi Teng, Ksohsiung, TW;
Tsuo-wen LU, Kaohsiung, TW;
Chih-chung Chen, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Yu-min Lin, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Jei-ming Chen, Tainan, TW;
Chun-wei Hsu, Taipei, TW;
Chia-lung Chang, Tainan, TW;
Yi-ching Wu, Kaohsiung, TW;
Shu-yen Chan, Changhua County, TW;
Shao-Wei Wang, Taichung, TW;
Yu-Ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Wen-Yi Teng, Ksohsiung, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Chih-Chung Chen, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Yu-Min Lin, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Jei-Ming Chen, Tainan, TW;
Chun-Wei Hsu, Taipei, TW;
Chia-Lung Chang, Tainan, TW;
Yi-Ching Wu, Kaohsiung, TW;
Shu-Yen Chan, Changhua County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.