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For the Inventor, By the Inventor

Changhua, Taiwan

Shu-Yen Chan

This inventor holds 34 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices. Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd., Other. Active years: 2008-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shu-Yen Chan. Retrieved from https://idiyas.com/inventor/shu-yen-chan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 184(Granted Patents)


Location History:

  • Hsin-Chu Hsien, TW (2009)
  • Hsinchu County, TW (2008 - 2010)
  • Hsinchu, TW (2012)
  • Yuanlin, TW (2017 - 2018)
  • Changhua County, TW (2011 - 2023)

Company Filing History:

goldMedal33 out of 7,269 
 
United Microelectronics Corp.
 patents
silverMedal13 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
bronzeMedal1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2008-2023

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Areas of Expertise:
Semiconductor Device
Multi-Thickness Gate
MOS Transistor
Strained Silicon
Epitaxial Layer
Diffusion Barrier
Buried Word Line
Ion Implantation
Gate Leakage Reduction
Silicon-Germanium Layer
Stress-Providing Structure
Annealing Process
34 patents (USPTO):Explore Patents
1. 11770924 - Semiconductor device (2023-09-26),
2. 11631679 - Semiconductor device (2023-04-18),
3. 11502180 - Semiconductor device and method of forming the same (2022-11-15),
4. 11393826 - Semiconductor device and method of forming the same (2022-07-19),
5. 10847517 - Method for forming semiconductor device having a multi-thickness gate trench dielectric layer (2020-11-24),
6. 10608093 - Semiconductor device and method of forming the same (2020-03-31),
7. 10608086 - Semiconductor structure with diffusion barrier region and manufacturing method thereof (2020-03-31),
8. 10497704 - Buried word line structure and method of making the same (2019-12-03),
9. 10373958 - Semiconductor device having a multi-thickness gate trench dielectric layer (2019-08-06),
10. 10332889 - Method of manufacturing a semiconductor device (2019-06-25),
11. 10217750 - Buried word line structure and method of making the same (2019-02-26),
12. 10056388 - Method for fabricating semiconductor device (2018-08-21),
13. 10056288 - Semiconductor device and fabrication method thereof (2018-08-21),
14. 9966468 - Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same (2018-05-08),
15. 9899498 - Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same (2018-02-20),

Title: The Innovative Journey of Inventor Shu-Yen Chan

Introduction: Shu-Yen Chan, a talented inventor hailing from Changhua County, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Shu-Yen Chan's latest patents include a cutting-edge smart home device that revolutionizes household automation, as well as a patented algorithm for enhancing cybersecurity measures in digital platforms.

Career Highlights: Throughout his illustrious career, Shu-Yen Chan has been recognized for his innovative spirit and problem-solving skills. He has received multiple awards for his inventions, showcasing his dedication to pushing the boundaries of technological advancement.

Collaborations: Shu-Yen Chan has collaborated with leading tech companies and research institutions to further develop his inventions and bring them to the market. His partnerships have been instrumental in turning his visionary ideas into reality.

Conclusion: In conclusion, Shu-Yen Chan stands as a beacon of innovation in the technology sector, with a remarkable track record of pioneering inventions that have reshaped the way we interact with the digital world. His relentless pursuit of excellence continues to inspire aspiring inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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