The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jul. 19, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tien-Chen Chan, Tainan, TW;

Yi-Fan Li, Tainan, TW;

Li-Wei Feng, Kaohsiung, TW;

Ming-Hua Chang, Tainan, TW;

Yu-Shu Lin, Pingtung County, TW;

Shu-Yen Chan, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.


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