Ming-Hua Chang

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Hua Chang. Retrieved from https://idiyas.com/inventor/ming-hua-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 35(Granted Patents)

Company Filing History:

20 out of 7,285

United Microelectronics Corp.

patents

Years Active: 2014-2025

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Areas of Expertise:

High Electron Mobility Transistor

Semiconductor Structure

Epitaxial Process

Fin-Shaped Field Effect Transistor

Silicon-Germanium Layer

Recess Modification

Fabrication Method

Device Manufacturing

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12356654 - High electron mobility transistor and method for fabricating the same (2025-07-08),

2. 12324181 - High electron mobility transistor and method for fabricating the same (2025-06-03),

3. 12274081 - Semiconductor structure and method for forming the same (2025-04-08),

4. 12261052 - High electron mobility transistor and fabricating method of the same (2025-03-25),

5. 12218229 - Semiconductor structure and method for forming the same (2025-02-04),

6. 12040393 - High electron mobility transistor and method for fabricating the same (2024-07-16),

7. 12040392 - High electron mobility transistor and method for fabricating the same (2024-07-16),

8. 12002681 - High electron mobility transistor and fabricating method of the same (2024-06-04),

9. 11552187 - High electron mobility transistor and method for fabricating the same (2023-01-10),

10. 9966468 - Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same (2018-05-08),

11. 9899498 - Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same (2018-02-20),

12. 9680022 - Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same (2017-06-13),

13. 9660086 - Fin-shaped field effect transistor (2017-05-23),

14. 9397214 - Semiconductor device (2016-07-19),

15. 9373705 - Manufacturing method of a fin-shaped field effect transistor and a device thereof (2016-06-21),

Title: The Innovative Journey of Ming-Hua Chang

Introduction: Ming-Hua Chang, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Ming-Hua Chang's latest patents include advancements in renewable energy technologies, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Ming-Hua Chang has established himself as a pioneer in the tech industry, holding numerous patents that have revolutionized various sectors. His keen eye for detail and passion for innovation have led to the development of cutting-edge solutions that have garnered international acclaim.

Collaborations: Ming-Hua Chang has collaborated with leading tech companies, research institutions, and universities around the world to further his research and bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has resulted in the successful implementation of several groundbreaking projects.

Conclusion: In conclusion, Ming-Hua Chang's relentless pursuit of innovation and his dedication to pushing the boundaries of technology have solidified his position as a visionary inventor. His work continues to inspire future generations of inventors and shape the landscape of technological advancements globally.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]