The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
May. 17, 2016
United Microelectronics Corporation, Hsinchu, TW;
Chun-Yu Chen, Taichung, TW;
Chung-Ting Huang, Kaohsiung, TW;
Ming-Hua Chang, Tainan, TW;
Tien-Chen Chan, Tainan, TW;
Yen-Hsing Chen, Taipei, TW;
Hsin-Chang Wu, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).