The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Aug. 14, 2015
United Microelectronics Corporation, Hsinchu, TW;
Chun-Yu Chen, Taichung, TW;
Chung-Ting Huang, Kaohsiung, TW;
Ming-Hua Chang, Tainan, TW;
Tien-Chen Chan, Tainan, TW;
Yen-Hsing Chen, Taipei, TW;
Hsin-Chang Wu, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The present invention provides a manufacturing method of a fin-shaped field effect transistor (FinFET), comprises the following steps. Firstly, providing a substrate having a fin structure; forming a gate structure on the fin structure perpendicular to a extending direction of the fin structure; performing an amorphous implantation to form an amorphous layer on a exposed portion of the fin structure exposed by the gate structure and a light-doping implantation; forming a sacrificial spacer on sides of the gate structure covering a portion of the amorphous layer on the fin structure; forming a trench on the fin structure adjacent to the sacrificial spacer; growing an alloy in the trench; and then removing the sacrificial spacer. The invention also provides a FinFET device thereof.