The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 12, 2016
United Microelectronics Corp., Hsinchu, TW;
Tien-Chen Chan, Tainan, TW;
Yi-Fan Li, Tainan, TW;
Yen-Hsing Chen, Taipei, TW;
Chun-Yu Chen, Taichung, TW;
Chung-Ting Huang, Kaohsiung, TW;
Zih-Hsuan Huang, Tainan, TW;
Ming-Hua Chang, Tainan, TW;
Yu-Shu Lin, Pingtung, TW;
Shu-Yen Chan, Yuanlin, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device is provided, including a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer; a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the lateral sidewalls of the fin; and a gate stack formed on the isolation layer and across the fin, wherein the fin and the gate stack respectively extend along a first direction and a second direction. The SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30.