The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Feb. 16, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tien-Chen Chan, Tainan, TW;

Hsin-Chang Wu, Hsin-Chu, TW;

Chun-Yu Chen, Taichung, TW;

Ming-Hua Chang, Tainan, TW;

Sheng-Hsu Liu, Changhua County, TW;

Chieh-Lung Wu, Kaohsiung, TW;

Chung-Min Tsai, Tainan, TW;

Neng-Hui Yang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/161 (2013.01); H01L 29/36 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.


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