The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Feb. 17, 2020
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Chia-Wei Wu, Taichung, TW;

Ting-Pang Chung, Taichung, TW;

Tien-Chen Chan, Tainan, TW;

Shu-Yen Chan, Changhua County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 27/11568 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/02233 (2013.01); H01L 21/02244 (2013.01); H01L 21/02255 (2013.01); H01L 27/108 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01); H01L 27/12 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/4238 (2013.01); H01L 29/4908 (2013.01);
Abstract

A semiconductor device includes a substrate having at least a trench formed therein. A conductive material fills a lower portion of the trench. A barrier layer is between the conductive material and the substrate. An insulating layer is in the trench and completely covers the conductive material and the barrier layer, wherein a portion of the insulating layer covering the barrier layer has a bird's peak profile.


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