The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Sep. 19, 2011
Shao-wei Wang, Taichung, TW;
Yu-ren Wang, Tainan, TW;
Chien-liang Lin, Taoyuan County, TW;
Wen-yi Teng, Kaohsiung, TW;
Tsuo-wen LU, Kaohsiung, TW;
Chih-chung Chen, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Shao-Wei Wang, Taichung, TW;
Yu-Ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Wen-Yi Teng, Kaohsiung, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Chih-Chung Chen, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.