The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Apr. 20, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Cheng Chen, Tainan, TW;
Ko-Wei Lin, Taichung, TW;
Ying-Wei Yen, Miaoli County, TW;
Chun-Ling Lin, Tainan, TW;
PO-Jen Chuang, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating an interconnect structure is disclosed. A substrate with a first dielectric layer is provided. A first conductor is formed in the first dielectric layer. A second dielectric layer is formed on the first dielectric layer. A trench is formed in the second dielectric layer to expose the top surface of the first conductor. An annealing process is performed on the top surface of the first conductor. The annealing process includes the conditions of a temperature of 400-450° C., duration less than 5 minutes, and gaseous atmosphere comprising hydrogen and nitrogen.