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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11063135 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Jun. 04, 2018

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chia-Ming Kuo, Kaohsiung, TW;

Po-Jen Chuang, Kaohsiung, TW;

Yu-Ren Wang, Tainan, TW;

Ying-Wei Yen, Miaoli County, TW;

Fu-Jung Chuang, Kaohsiung, TW;

Ya-Yin Hsiao, Taipei, TW;

Nan-Yuan Huang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Benjamin Tzu-Hung Liu

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02167 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 21/0206 (2013.01); H01L 21/28088 (2013.01); H01L 21/3212 (2013.01); H01L 21/32133 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6653 (2013.01);
Abstract

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Find Patent Forward Citations

Kuo, Chia-Ming. (2021). Semiconductor device and method for fabricating the same (U.S. Patent No. 11063135). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11063135

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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