The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 20, 2011
Chien-liang Lin, Taoyuan County, TW;
Te-lin Sun, Kaohsiung, TW;
Ying-wei Yen, Miaoli County, TW;
Yu-ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Te-Lin Sun, Kaohsiung, TW;
Ying-Wei Yen, Miaoli County, TW;
Yu-Ren Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter.