The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jun. 04, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chia-Ming Kuo, Kaohsiung, TW;
Po-Jen Chuang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Fu-Jung Chuang, Kaohsiung, TW;
Ya-Yin Hsiao, Taipei, TW;
Nan-Yuan Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0214 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H01L 21/0206 (2013.01); H01L 21/28088 (2013.01); H01L 21/3212 (2013.01); H01L 21/32133 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6653 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.