The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Jan. 02, 2012
Applicants:
Te-lin Sun, Kaohsiung, TW;
Chien-liang Lin, Taoyuan County, TW;
Yu-ren Wang, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Inventors:
Te-Lin Sun, Kaohsiung, TW;
Chien-Liang Lin, Taoyuan County, TW;
Yu-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/318 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02247 (2013.01); H01L 21/3185 (2013.01); H01L 21/76224 (2013.01); H01L 21/02329 (2013.01);
Abstract
A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.