Phoenix, AZ, United States of America

Xin Lin

USPTO Granted Patents = 82 

Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 823(Granted Patents)

Forward Citations (Not Self Cited) = 776(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • State College, PA (US) (1999)
  • Chandler, AZ (US) (2003 - 2004)
  • Pheonix, AZ (US) (2015)
  • San Jose, CA (US) (2020)
  • Phoenix, AZ (US) (2004 - 2023)

Company Filing History:


Years Active: 1999-2025

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Areas of Expertise:
Polycrystalline Semiconductor Resistor
LDMOS Devices
High Voltage Transistors
Semiconductor Device Isolation
Bipolar Transistor Fabrication
Schottky Diodes
Zener Diode Devices
Drain Active Area
Depleted Coupling Layer
3D RESURF Technology
Isolation Bias Techniques
Multiple Junction Diodes
82 patents (USPTO):Explore Patents

Title: Xin Lin: Innovative Patents and Collaborations

Introduction:

In the world of technological advancements, Xin Lin has emerged as a prominent figure. With 81 patents to his name, Xin Lin has cemented his place as an accomplished inventor. Based in Phoenix, AZ, Xin Lin's contributions to the field of electronics and semiconductors have significantly impacted various industries. This article will delve into his latest patents, career highlights, noteworthy collaborations, and his remarkable journey as an inventor.

Latest Patents:

Among Xin Lin's recent patents, two notable innovations stand out - "Capacitor with an electrode well" and "LDMOS with an improved breakdown performance."

The "Capacitor with an electrode well" patent presents a novel approach to capacitor design. By integrating an electrode within an electrode well of a substrate, this invention enhances the performance and efficiency of capacitors. The incorporation of distinct tub regions with varied dopant concentrations further contributes to the capacitor's effectiveness.

The second patent, "LDMOS with an improved breakdown performance," focuses on the manufacturing process of semiconductor devices. This invention introduces a method for optimizing the positioning of a drain electrode in relation to a plate structure. By strategically altering the distances between various components, the breakdown performance of LDMOS devices is significantly enhanced.

Career Highlights:

Xin Lin has made substantial contributions to the semiconductor industry throughout his career, leaving a notable impact on the field. He has worked with renowned companies such as Freescale Semiconductor, Inc. and NXP USA, Inc., where he contributed to the development of groundbreaking technologies and patents.

Having obtained 81 patents, Xin Lin's expertise and dedication have played crucial roles in advancing the semiconductor landscape. His ability to push boundaries and seek innovative solutions has earned him a reputation as a true visionary.

Collaborations:

Collaboration and teamwork have been key factors in Xin Lin's success. During his career, he has had the privilege of working with talented individuals who share his passion for innovation. Notably, Xin Lin has collaborated with Jiang-kai Zuo and Hongning Yang, further enriching his patent portfolio as well as fostering a creative environment for technological breakthroughs.

Conclusion:

Xin Lin's remarkable journey as an inventor showcases his dedication to pushing the boundaries of technology. With a diverse range of patents, including his latest contributions in capacitor design and LDMOS optimization, Xin Lin has proven his ability to revolutionize the field of semiconductors.

Through his collaborations and his experiences at esteemed companies like Freescale Semiconductor, Inc. and NXP USA, Inc., Xin Lin has left a lasting impact on the industry. As he continues to innovate and pursue new ideas, his contributions will undoubtedly shape the future of electronics and beyond.

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