The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Sep. 11, 2015
Nxp Usa, Inc., Austin, TX (US);
Hongning Yang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and defining a core device area within the doped isolation barrier, an isolation contact region disposed in the semiconductor substrate outside of the core device area and to which a voltage is applied during operation, and a depleted well region disposed in the semiconductor substrate outside of the core device area. The depleted well region electrically couples the isolation contact region and the doped isolation barrier such that the doped isolation barrier is biased at a voltage level lower than the voltage applied to the isolation contact region.