Chandler, AZ, United States of America

Zhihong Zhang

This inventor holds 34 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Freescale Semiconductors Inc.. Active years: 2013-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhihong Zhang. Retrieved from https://idiyas.com/inventor/zhihong-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 85.3

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 82(Granted Patents)


Location History:

  • Phoenix, AZ (US) (2013)
  • Tempe, AZ (US) (2013 - 2016)
  • Austin, TX (US) (2017)
  • Chandler, AZ (US) (2014 - 2023)

Company Filing History:


Years Active: 2013-2023

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Areas of Expertise:
LDMOS
Isolation
Deep Trench
Breakdown Performance
Reliability
Hot-Carrier Injection
Charge Balancing
Composite Drift Region
Mergeable Devices
Self-Biased Isolation
Voltage Extension
3D Resurf
34 patents (USPTO):Explore Patents

Title: Zhihong Zhang: Innovator in Semiconductor Technology

Introduction: Zhihong Zhang, based in Chandler, AZ, is a prolific inventor with an impressive portfolio comprising 34 patents. His expertise primarily lies in semiconductor devices, where he has made significant advancements that enhance performance and efficiency.

Latest Patents: Among his latest contributions to the field, two notable patents stand out. The first patent relates to "LDMOS with an improved breakdown performance," which details a method for manufacturing a semiconductor device. This innovation includes forming a plate structure over an isolation region, where a drain electrode is strategically positioned to optimize performance. The second patent, titled "Apparatus for extension of operation voltage," describes a device that incorporates a substrate with advanced semiconductor layers and structures. This innovation includes a dummy LDMOS device that aids in reducing electric field stress in the active device region, thus improving the reliability of the semiconductor operations.

Career Highlights: Zhihong Zhang has held key positions at several renowned companies, including Freescale Semiconductor, Inc. and NXP USA, Inc. His work has significantly contributed to the advancement of semiconductor technologies, allowing for the development of devices with enhanced functionalities and durability.

Collaborations: Throughout his career, Zhang has collaborated with notable professionals in the field, including Jiang-kai Zuo and Hongning Yang. These partnerships have fostered innovative thinking and enhanced the quality of the projects they undertook together.

Conclusion: Zhihong Zhang's contributions to semiconductor technology through his numerous patents demonstrate his commitment to innovation. His extensive experience and collaborations highlight his pivotal role in advancing the field, paving the way for future developments in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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