The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Oct. 29, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Zhihong Zhang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Hongning Yang, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate to isolate the device, a drain region disposed in the semiconductor substrate and to which a voltage is applied during operation, and a depleted well region disposed in the semiconductor substrate, and having a conductivity type in common with the doped isolation barrier and the drain region. The depleted well region is positioned between the doped isolation barrier and the drain region to electrically couple the doped isolation barrier and the drain region such that the doped isolation barrier is biased at a voltage level lower than the voltage applied to the drain region.