Hongning Yang

This inventor holds 67 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Freescale Semiconductors Inc.. Active years: 2008-2019.

USPTO Granted Patents = 67 (Patent Applications = 1)

% Patents Active = 86.6

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 297(Granted Patents)

Forward Citations (Not Self Cited) = 238(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

45 out of 5,491

Freescale Semiconductor,inc.

Freescale Semiconductors Inc.

patents

Years Active: 2008-2019

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Areas of Expertise:

Semiconductor Device

Isolation Techniques

High Breakdown Voltage

3D Resurf

LDMOS

Diodes

Composite Drift Region

Reliability

Hot-Carrier Injection

Bipolar Transistors

Mergeable Devices

Threshold Voltages

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10297676 - Partially biased isolation in semiconductor device (2019-05-21),

2. 10217860 - Partially biased isolation in semiconductor devices (2019-02-26),

3. 10177252 - Semiconductor device isolation with RESURF layer arrangement (2019-01-08),

4. 9941350 - Semiconductor device isolation via depleted coupling layer (2018-04-10),

5. 9871135 - Semiconductor device and method of making (2018-01-16),

6. 9831338 - Alternating source region arrangement (2017-11-28),

7. 9825169 - Partial, self-biased isolation in semiconductor devices (2017-11-21),

8. 9761707 - Laterally diffused MOSFET with isolation region (2017-09-12),

9. 9728600 - Partially biased isolation in semiconductor devices (2017-08-08),

10. 9691880 - Semiconductor device with enhanced 3D resurf (2017-06-27),

11. 9680011 - Self-adjusted isolation bias in semiconductor devices (2017-06-13),

12. 9666671 - Semiconductor device with composite drift region and related fabrication method (2017-05-30),

13. 9647082 - Diodes with multiple junctions (2017-05-09),

14. 9640635 - Reliability in mergeable semiconductor devices (2017-05-02),

15. 9614074 - Partial, self-biased isolation in semiconductor devices (2017-04-04),

Title: Inventor Hongning Yang: Pioneering Innovations in Chandler

Introduction: Hongning Yang, a distinguished inventor based in Chandler, AZ, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yang holds several patents in the areas of artificial intelligence, machine learning, and data analytics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Yang has worked with leading tech companies, research institutions, and universities, driving forward the boundaries of technological advancements.

Collaborations: Throughout his career, Yang has collaborated with top researchers, engineers, and scientists globally, fostering a culture of innovation and knowledge sharing.

Conclusion: Hongning Yang's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field of inventions and patents.