Jiang-kai Zuo

This inventor holds 101 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L29-66681). Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Freescale Semiconductors Inc.. Active years: 2007-2019.

USPTO Granted Patents = 101 (Patent Applications = 2)

% Patents Active = 83.2

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 3.3

ph-index = 11

Forward Citations = 389(Granted Patents)

Forward Citations (Not Self Cited) = 324(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

75 out of 5,491

Freescale Semiconductor,inc.

Freescale Semiconductors Inc.

patents

Years Active: 2007-2019

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Areas of Expertise:

Electro-Static Discharge

Isolation Methods

Bipolar Transistor

High Breakdown Voltage

Deep Trench Isolation

Resurf Layer

Multi-Gate Devices

Composite Drift Region

Fast Programming Antifuse

High Voltage Diode

Charge Balancing

Reliability

101 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10297590 - Electro-static discharge protection device and method of making (2019-05-21),

2. 10217860 - Partially biased isolation in semiconductor devices (2019-02-26),

3. 10177252 - Semiconductor device isolation with RESURF layer arrangement (2019-01-08),

4. 9941350 - Semiconductor device isolation via depleted coupling layer (2018-04-10),

5. 9917150 - Deep trench isolation structures and systems and methods including the same (2018-03-13),

6. 9905687 - Semiconductor device and method of making (2018-02-27),

7. 9893164 - Bipolar transistor device fabrication methods (2018-02-13),

8. 9871135 - Semiconductor device and method of making (2018-01-16),

9. 9831338 - Alternating source region arrangement (2017-11-28),

10. 9825169 - Partial, self-biased isolation in semiconductor devices (2017-11-21),

11. 9728600 - Partially biased isolation in semiconductor devices (2017-08-08),

12. 9691880 - Semiconductor device with enhanced 3D resurf (2017-06-27),

13. 9680011 - Self-adjusted isolation bias in semiconductor devices (2017-06-13),

14. 9666671 - Semiconductor device with composite drift region and related fabrication method (2017-05-30),

15. 9647082 - Diodes with multiple junctions (2017-05-09),

Title: Unveiling the Innovation Journey of Inventor Jiang-kai Zuo

Introduction:

In the realm of technological advancements, Chandler, AZ (US) is home to the brilliant mind of inventor Jiang-kai Zuo. With an impressive portfolio of 101 patents, his contributions have significantly impacted the field of semiconductor devices. Let's delve into his latest patents, career highlights, and collaborations with industry peers.

Latest Patents:

Jiang-kai Zuo's recent patents showcase his expertise in semiconductor technology. One notable invention is the Electro-static Discharge Protection Device, which utilizes a Field-Effect Transistor (FET) configured as a diode to enhance ESD protection. Another groundbreaking innovation is the Partially Biased Isolation in Semiconductor Devices, optimizing the performance of devices by effectively managing voltage levels.

Career Highlights:

Throughout his career, Jiang-kai Zuo has made significant strides in the semiconductor industry. He has contributed his innovative ideas and expertise to renowned companies such as Freescale Semiconductor, Inc. and NXP USA, Inc. His role in developing cutting-edge technologies has solidified his reputation as a pioneering inventor in the field.

Collaborations:

Collaboration lies at the heart of innovation, and Jiang-kai Zuo has had the privilege of working with talented individuals such as Hongning Yang and Xin Lin. Together, they have embarked on projects that have pushed the boundaries of semiconductor technology, fostering a culture of creativity and excellence.

Conclusion:

Inventor Jiang-kai Zuo's journey is a testament to the power of innovation and perseverance in the ever-evolving landscape of technology. His trailblazing patents, extensive career highlights, and fruitful collaborations underscore his profound impact on the semiconductor industry. Jiang-kai Zuo's legacy of ingenuity continues to inspire future generations of inventors and innovators.