The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Feb. 17, 2017
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/088 (2013.01); H01L 27/0922 (2013.01); H01L 29/063 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/0847 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01); H01L 29/66659 (2013.01); H01L 29/66674 (2013.01); H01L 29/66681 (2013.01); H01L 29/7801 (2013.01); H01L 29/7802 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01); H01L 21/823456 (2013.01); H01L 21/823493 (2013.01); H01L 21/823892 (2013.01);
Abstract
Laterally diffused metal-oxide-semiconductor (LDMOS) device is disclosed. The device is surrounded by an isolation ring and a buried layer of a first doping type, that is of the same type as its source and drain regions of the same doping type. A control gate of the device includes step gate dielectric.