The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Sep. 03, 2015
Xin Lin, Phoenix, AZ (US);
Daniel J Blomberg, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A method of fabricating a bipolar transistor device includes performing a first plurality of implantation procedures to implant dopant of a first conductivity type to form emitter and collector regions laterally spaced from one another in a semiconductor substrate, and performing a second plurality of implantation procedures to implant dopant of a second conductivity type in the semiconductor substrate to form a composite base region. The composite base region includes a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions.